| 发明名称 |
FIELD EFFECT TRANSISTOR HAVING NANOSTRUCTURE CHANNEL |
| 摘要 |
A field effect transistor (FET) includes a drain formed of a first material, a source formed of the first material, a channel formed by a nanostructure coupling the source to the drain, and a gate formed between the source and the drain and surrounding the nanostructure. |
| 申请公布号 |
US2012108024(A1) |
申请公布日期 |
2012.05.03 |
| 申请号 |
US201213345252 |
申请日期 |
2012.01.06 |
| 申请人 |
CHANG JOSEPHINE B.;GUILLORN MICHAEL A.;JOSEPH ERIC A.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG JOSEPHINE B.;GUILLORN MICHAEL A.;JOSEPH ERIC A. |
| 分类号 |
H01L21/336;B82Y40/00 |
主分类号 |
H01L21/336 |
| 代理机构 |
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| 主权项 |
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