| 摘要 |
<p>To reduce the contact resistance between an oxide semiconductor layer and a source/drain electrode in a thin film transistor that uses an oxide semiconductor material for a channel layer. A thin film transistor, wherein a gate electrode (11), a gate insulating film (12), an amorphous oxide semiconductor layer (13) that constitutes a channel layer, a source electrode (14s) and a drain electrode (14d) are sequentially laminated in this order, is formed on the upper surface of a substrate (10). Crystal grains (13cg), which contain a constituent element of the amorphous oxide semiconductor layer (13), are formed within the amorphous oxide semiconductor layer (13) in the vicinity of the interfaces with the source electrode (14s) and the drain electrode (14d). The crystal grains (13cg) are formed by utilizing the energy of accelerated particles that are incident on the amorphous oxide semiconductor layer (13) when a conductive film that constitutes the source electrode (14s) and the drain electrode (14d) is deposited.</p> |
