| 摘要 |
PURPOSE: A flash memory device and an operating method thereof are provided to reduce a lead operation time by precharging a bit line from a middle level to a high level in a precharge section for a second sensing operation. CONSTITUTION: A bit line is firstly precharged to a high level(S401). A voltage variation of the bit line is sensed by applying a first lead voltage to a selected word line(S403). The bit line is made at a middle level between the high level and a low level(S405). The bit line is secondly precharged to the high level(S407). The voltage variation of the bit line is sensed by applying a second lead voltage to the selected word line(S409). |
