PHASE CHANGE MEMORY CELL

摘要

On a first structure having a first dielectric layer, a second dielectric layer, and a third dielectric layer a crown is formed through the third dielectric layer and the second dielectric layer. A fourth dielectric layer is deposited over the first structure and thereby is over the crown. A portion of the fourth dielectric layer is removed to form a first spacer having a remaining portion of the fourth dielectric layer. A portion of the third electric layer is also removed during the removal of the portion the fourth dielectric layer, resulting in a second spacer having a remaining portion of the third dielectric layer. A second structure is thereby formed. A phase change material layer is deposited over the second structure. An electrode layer is deposited over the phase change layer. Portions of the electrode layer and the phase change layer are removed by a chemical-mechanical-polishing process to form a phase change region having a remaining portion of the phase change layer and to form an electrode region having a remaining portion of the electrode layer.