发明名称 Semiconductor Device and Method of Forming Wafer Level Ground Plane and Power Ring
摘要 A semiconductor die has active circuits formed on its active surface. Contact pads are formed on the active surface of the semiconductor die and coupled to the active circuits. A die extension region is formed around a periphery of the semiconductor die. Conductive THVs are formed in the die extension region. A wafer level conductive plane or ring is formed on a center area of the active surface. The conductive plane or ring is connected to a first contact pad to provide a first power supply potential to the active circuits, and is electrically connected to a first conductive THV. A conductive ring is formed partially around a perimeter of the conductive plane or ring and connected to a second contact pad for providing a second power supply potential to the active circuits. The conductive ring is electrically connected to a second THV.
申请公布号 US2012104601(A1) 申请公布日期 2012.05.03
申请号 US201213346415 申请日期 2012.01.09
申请人 BADAKERE GURUPRASAD G.;CAMACHO ZIGMUND R.;TAY LIONEL CHIEN HUI;STATS CHIPPAC, LTD. 发明人 BADAKERE GURUPRASAD G.;CAMACHO ZIGMUND R.;TAY LIONEL CHIEN HUI
分类号 H01L23/498;H01L21/56;H01L21/60 主分类号 H01L23/498
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