METHOD FOR PRODUCING POLYCRYSTALLINE SILICON RODS

摘要

PURPOSE: A method for manufacturing a polycrystalline silicon rod is provided to overcome the high temperature of a thin rod and the contamination of a temporarily cleaned thin rod. CONSTITUTION: Hydrogen halide is introduced into a reactor(4) containing one or more tin rods of 400 to 1000 degrees Celsius. Ultraviolet ray is irradiated to the reactor to generate hydrogen and hydrogen radical causing the generation of volatile halide and hydride. The volatile halide and hydride are eliminated from the reactor. Silicon is deposited on the surface of one or more thin rods in the reactor.