发明名称 |
Methods Of Forming Doped Regions In Semiconductor Substrates |
摘要 |
Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant.
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申请公布号 |
US2012108042(A1) |
申请公布日期 |
2012.05.03 |
申请号 |
US20100938845 |
申请日期 |
2010.11.03 |
申请人 |
LIU JENNIFER LEQUN;QIN SHU;MCTEER ALLEN;HU YONGJUN JEFF;MICRON TECHNOLOGY, INC. |
发明人 |
LIU JENNIFER LEQUN;QIN SHU;MCTEER ALLEN;HU YONGJUN JEFF |
分类号 |
H01L21/322 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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