发明名称 Method for manufacturing a group III nitride crystal, method for manufacturing a group III nitride template, group III nitride crystal and group III nitride template
摘要 A method for manufacturing a group III nitride crystal includes a step of mixing a group III source material and ammonia in a reactor including quartz, and growing a group III nitride crystal on a support substrate by a vapor deposition. The group III source material is an organic metal source material containing Al. The organic metal source material is mixed with a hydrogen halide gas and the mixture of the organic metal source material and the hydrogen halide gas is supplied to the reactor.
申请公布号 US2012104557(A1) 申请公布日期 2012.05.03
申请号 US201113137538 申请日期 2011.08.24
申请人 YOSHIDA TAKEHIRO;OSHIMA YUICHI;TSUCHIYA TADAYOSHI;HITACHI CABLE, LTD. 发明人 YOSHIDA TAKEHIRO;OSHIMA YUICHI;TSUCHIYA TADAYOSHI
分类号 C30B25/00;H01B1/02;H01L29/20 主分类号 C30B25/00
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