发明名称 |
Method for manufacturing a group III nitride crystal, method for manufacturing a group III nitride template, group III nitride crystal and group III nitride template |
摘要 |
A method for manufacturing a group III nitride crystal includes a step of mixing a group III source material and ammonia in a reactor including quartz, and growing a group III nitride crystal on a support substrate by a vapor deposition. The group III source material is an organic metal source material containing Al. The organic metal source material is mixed with a hydrogen halide gas and the mixture of the organic metal source material and the hydrogen halide gas is supplied to the reactor. |
申请公布号 |
US2012104557(A1) |
申请公布日期 |
2012.05.03 |
申请号 |
US201113137538 |
申请日期 |
2011.08.24 |
申请人 |
YOSHIDA TAKEHIRO;OSHIMA YUICHI;TSUCHIYA TADAYOSHI;HITACHI CABLE, LTD. |
发明人 |
YOSHIDA TAKEHIRO;OSHIMA YUICHI;TSUCHIYA TADAYOSHI |
分类号 |
C30B25/00;H01B1/02;H01L29/20 |
主分类号 |
C30B25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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