| 摘要 |
<p>Disclosed is a thin film transistor wherein at least a gate electrode, a gate insulating film, an active layer, a source electrode and a drain electrode are provided on a substrate, with the source electrode and the drain electrode being provided on the active layer. The active layer is configured of an amorphous oxide semiconductor. A first water content contained in the gate insulating film is smaller than a second water content contained in the active layer.</p> |
