GRAPHENE TRANSPARENT ELECTODE AND FLEXIBLE SILICON THIN FILM SEMICONDUCTOR DEVICE HAVING THE SAME

摘要

PURPOSE: A graphene transparent electrode and a flexible silicon thin film semiconductor device including thereof are provided to enhance electrical, optical, and mechanical properties of the graphene film. CONSTITUTION: A graphene transparent electrode includes a graphene film. The graphene film is provided as a conductive layer. A transparent electrode is flexible. The graphene film is formed on a transparent substrate. A thickness of the graphene film is 0.1 nano meter-10 nano meters. A surface resistance of the transparent electrode is 1-1000Ω/sq. A permeability of the transparent electrode is 70% or greater. The grapheme film is manufactured by providing carbon source and heat to transition metal catalyst layer for growth of the graphene and translating the grew graphene film by using a chemical gaseity deposition method.