发明名称 |
Semiconductor apparatus and method of manufacturing semiconductor apparatus |
摘要 |
A semiconductor apparatus includes: an MOS type field effect transistor formed on a semiconductor substrate and having a first gate electrode set at a predetermined impurity concentration; and a charge modulation device formed on the semiconductor substrate and having a second gate electrode set at a predetermined impurity concentration lower than the impurity concentration of the first gate electrode.
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申请公布号 |
US2012104501(A1) |
申请公布日期 |
2012.05.03 |
申请号 |
US201113200645 |
申请日期 |
2011.09.28 |
申请人 |
ANZAI KUNIO;SONY CORPORATION |
发明人 |
ANZAI KUNIO |
分类号 |
H01L27/092;H01L21/28 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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