发明名称 Semiconductor apparatus and method of manufacturing semiconductor apparatus
摘要 A semiconductor apparatus includes: an MOS type field effect transistor formed on a semiconductor substrate and having a first gate electrode set at a predetermined impurity concentration; and a charge modulation device formed on the semiconductor substrate and having a second gate electrode set at a predetermined impurity concentration lower than the impurity concentration of the first gate electrode.
申请公布号 US2012104501(A1) 申请公布日期 2012.05.03
申请号 US201113200645 申请日期 2011.09.28
申请人 ANZAI KUNIO;SONY CORPORATION 发明人 ANZAI KUNIO
分类号 H01L27/092;H01L21/28 主分类号 H01L27/092
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