发明名称 |
MULTILAYERED MATERIAL AND METHOD OF PRODUCING THE SAME |
摘要 |
A multilayered material is provided which includes a substrate and a silicon-containing film formed on the substrate, wherein the silicon-containing film has a nitrogen-rich area including silicon atoms and nitrogen atoms, or silicon atoms, nitrogen atoms, and an oxygen atoms and the nitrogen-rich area is formed by irradiating a polysilazane film formed on the substrate with an energy beam in an atmosphere not substantially including oxygen or water vapor and denaturing at least a part of the polysilazane film. A method of producing the multilayered material is also provided. |
申请公布号 |
US2012107607(A1) |
申请公布日期 |
2012.05.03 |
申请号 |
US201013384037 |
申请日期 |
2010.07.12 |
申请人 |
TAKAKI TOSHIHIKO;FUKUMOTO HARUHIKO;MITSUI CHEMICALS, INC. |
发明人 |
TAKAKI TOSHIHIKO;FUKUMOTO HARUHIKO |
分类号 |
B32B3/00;B29C71/04;B32B9/04;C01B21/087;C08J7/18;C09D183/16 |
主分类号 |
B32B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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