发明名称 |
Methods Of Forming Conductive Contacts In The Fabrication Of Integrated Circuitry |
摘要 |
A method of forming a conductive contact includes forming a structure comprising an upper surface joining with a sidewall surface. The sidewall surface contains elemental-form silicon. Silicon is epitaxially grown from the sidewall surface. Dielectric material is formed over the upper surface and the epitaxially-grown silicon. A conductive contact is formed through the dielectric material to conductively connect with the upper surface. |
申请公布号 |
US2012108047(A1) |
申请公布日期 |
2012.05.03 |
申请号 |
US20100917339 |
申请日期 |
2010.11.01 |
申请人 |
CHUANG YING-CHENG;TSAI HUNG-MING;YANG SHENG-WEI;HSU PING-CHENG;CHANG MING-CHENG |
发明人 |
CHUANG YING-CHENG;TSAI HUNG-MING;YANG SHENG-WEI;HSU PING-CHENG;CHANG MING-CHENG |
分类号 |
H01L21/768;H01L21/28 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|