| 摘要 |
The present invention provides a semiconductor device which is characterized as follows. The semiconductor device includes: an interlayer insulating film formed above a semiconductor substrate and provided with a hole above an impurity diffusion region; a conductive plug formed in the hole and electrically connected to the impurity diffusion region; a conductive oxygen barrier film formed on the conductive plug and the interlayer insulating film around the conductive plug; a conductive anti-diffusion film formed on the conductive oxygen barrier film; and a capacitor that has a lower electrode which is formed on the conductive anti-diffusion film and which exposes platinum or palladium on the upper surface, a capacitor dielectric film made of a ferroelectric material, and an upper electrode. The conductive anti-diffusion film is made of a non-oxide conductive material for preventing the diffusion of the constituent element of the capacitor dielectric film. |
