发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 The memory cell array has memory cells each positioned at respective intersections between a plurality of first wirings and a plurality of second wirings. Each of the memory cells has a rectifier element and a variable resistance element connected in series. The resistance element may have at least a first resistance value ant a second resistance value higher than the first resistance value. The contact arrangement portion is formed to arrange a plurality of contacts on a plane. The contacts are connected to the first wirings or the second wirings. The probe can move along the plane to electrically contact with either of the contacts.
申请公布号 US2012106230(A1) 申请公布日期 2012.05.03
申请号 US201213347344 申请日期 2012.01.10
申请人 MAEJIMA HIROSHI;KABUSHIKI KAISHA TOSHIBA 发明人 MAEJIMA HIROSHI
分类号 G11C5/06 主分类号 G11C5/06
代理机构 代理人
主权项
地址