TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A transistor and a manufacturing method thereof are provided. The transistor (100) includes: a semiconductor substrate (102); a gate dielectric (104) formed on the semiconductor substrate; a gate (106) formed on the gate dielectric; a channel region (112) located under the gate dielectric; a source region (108) and a drain region (110) located in the semiconductor and respectively at both sides of the channel region, wherein at least one of the source region and the drain region includes a group of dislocations (101) which are adjacent to the channel region and arranged in the direction perpendicular to the surface of the semiconductor substrate, the group of dislocations include at least two dislocations.