| 摘要 |
PURPOSE: A compound semiconductor light emitting device is provided to improve the output of the compound semiconductor light emitting device by improving an injection effect of holes and a restriction effect of electrons. CONSTITUTION: An active layer generates light by recombining electrons and holes. A first compound semiconductor layer has a first conductivity and is located on one side of the active layer. Electrons are injected into the first compound semiconductor layer. A second compound semiconductor layer(50) has a second conductivity and is located on the other side of the active layer. Holes are injected into the second compound semiconductor layer. An electron blocking layer(42) is located between the active layer and the second compound semiconductor layer and has a type-II band alignment.
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