发明名称 THIN-FILM MANUFACTURING METHOD AND APPARATUS
摘要 A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe.
申请公布号 US2012107524(A1) 申请公布日期 2012.05.03
申请号 US201113243044 申请日期 2011.09.23
申请人 KATANO TOMONORI;TANIGUCHI KATSUMI;TEII KUNGEN;KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION;FUJI ELECTRIC CO., LTD. 发明人 KATANO TOMONORI;TANIGUCHI KATSUMI;TEII KUNGEN
分类号 C23C16/50;C23C16/52 主分类号 C23C16/50
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