DIODE FOR ELECTROSTATIC PROTECTION

摘要

The present invention relates to a diode for electrostatic protection formed in an input/output pad on an integrated circuit. According to the present invention, an N-type semiconductor constituting a first diode is connected to a pad for supplying power, a P-type semiconductor constituting the first diode is connected to a signal line, an N-type semiconductor constituting a second diode is connected to the signal line, a P-type semiconductor constituting the second diode is connected to a ground pad, the N-type semiconductor of the first diode and the P-type semiconductor of the second diode are joined together to form a third diode. According to the diode for electrostatic protection, the first and second diodes prevent static electricity generated in the input/output pad from flowing into an internal circuit, and when the static electricity generated in the input/output pad flows to the power supply pad, the third diode is grounded to prevent static electricity from flowing into an internal circuit.