发明名称 Capacitors in Integrated Circuits and Methods of Fabrication Thereof
摘要 In one embodiment, a capacitor includes a first via level having first metal bars and first vias, such that the first metal bars are coupled to a first potential node. The first metal bars are longer than the first vias. Second metal bars and second vias are disposed in a second via level, the second metal bars are coupled to the first potential node. The second metal bars are longer than the second vias. The second via level is above the first via level and the first metal bars are parallel to the second metal bars. Each of the first metal bars has a first end, an opposite second end, and a middle portion between the first and the second ends. Each of the middle portions of the first metal bars and the second ends of the first metal bars do not contact any metal line.
申请公布号 US2012104552(A1) 申请公布日期 2012.05.03
申请号 US20100913550 申请日期 2010.10.27
申请人 KIM SUNOO;CHAE MOOSUNG;MOON BUM KI 发明人 KIM SUNOO;CHAE MOOSUNG;MOON BUM KI
分类号 H01L21/02;H01G4/00;H01L21/20 主分类号 H01L21/02
代理机构 代理人
主权项
地址