| 摘要 |
<p>A semiconductor island (1a) configuring a pixel is provided with: a first N+ semiconductor region (2) formed on a substrate; a second P semiconductor region (3) formed on the region (2); a third N semiconductor region (6a, 6b) formed in the upper lateral region of the region (3); an insulating layer (4a, 4b) formed on the outer circumference of the lower lateral region of the region (2) and the region (6a, 6b); a gate conductor layer (5a, 5b) formed on the outer circumference of the insulating layer (4a, 4b) and functioning as a gate electrode forming a channel to the bottom region of the region (2); a light-reflecting conductor layer (9a, 9b) formed on the outer circumference of the insulating layer (4a, 4b) and the N region (6a, 6b) but not on the gate conductor layer (5a, 5b); a fifth P+ semiconductor region (10) formed on the region (3) and the region (6a, 6b); and, a microlens (11) formed on the region (10) and with the focus point located near the top surface of the said region (10).</p> |
