| 摘要 |
PURPOSE: A semiconductor device and a fabricating method thereof are provided to prevent signal leakage and latch up by forming a buried insulating layer in a semiconductor substrate by using a CMOS(Complementary Metal Oxide Semiconductor) process. CONSTITUTION: An inversion blocking layer(102) is buried in a lower part at the one side of a semiconductor substrate(101). A first insulation layer(103) is formed in a recessed space after recessing a part of the inversion blocking layer. A second insulation layer(108) is formed an area between the first insulation layers inside the semiconductor substrate. A gate oxidation film(113) and a gate(112) are successively formed on a top part of the second insulation layer. An insulating layer(114) is formed on the top part of the gate. A metal via(115) is connected to the gate and a source/drain through a partial area of the insulating layer.
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