| 摘要 |
1,229,946. Field effect transistors. TEXAS INSTRUMENTS Inc. 30 Oct., 1968 [8 Nov., 1967], No. 51453/68. Heading H1K. A two-dimensional conduction layer in an insulated gate field-effect semi-conductor device lies parallel to a crystallographic plane exhibiting azimuthally dependent carrier mobility. In the embodiment a pair of series-connected MOSFET'S Q 1 , Q 2 forming an inverter circuit are built into the face of an N-type Si wafer lying in a 110 crystallographic plane. The drive transistor Q 1 is arranged with its channel along the 110 direction, that of maximum hole mobility, while the channel of load transistor Q 2 lies along the 001 direction for minimum mobility and hence highest impedance for a given size of device. The P-type source 20 of Q 1 drain 34 of Q 2 and the region which forms and interconnects the drain of Q 1 and source of Q 2 are diffused regions and the gate insulation is constituted by thinned areas of an overall thermal oxide film. Use of germanium, A III B V and A II B VI compounds instead of silicon is contemplated. A MOSFET with additional Hall electrodes for making mobility measurements is also described (Fig. 1, not shown). |
