发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PURPOSE: A substrate processing apparatus is provided to effectively eliminate particles remaining in a pipe while controlling collapse of a pattern formed on the substrate due to surface tension. CONSTITUTION: A chamber super-critically dries a substrate. A gas pipe is connected to the chamber and supplies a supercritical fluid to inside of the chamber. A tank is connected to the gas pipe and stores a first liquid. A high pressure pump aspirates the first liquid and compresses the first liquid. The high pressure pump discharges a compacted first liquid. A heater is located between the high pressure pump and the chamber. The heater heats the first liquid discharged from the high pressure pump and makes the first liquid to become the supercritical fluid. A filter filters particles included in the supercritical fluid.
申请公布号 KR20120041710(A) 申请公布日期 2012.05.02
申请号 KR20120022565 申请日期 2012.03.05
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TOMITA HIROSHI;JI LINAN;OKUCHI HISASHI;KOIDE TATSUHIKO;IIMORI HIROYASU;HAYASHI HIDEKAZU
分类号 H01L21/302 主分类号 H01L21/302
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