Piezo resistive pressure measuring element and use of the pressure measuring element

摘要

The pressure measuring element (1) has a piezoresistive layered semiconductor resistor element (2) that is formed on a substrate (3). The upper and lower portions (4,5) of the semiconductor resistor element are formed with specific thickness such that ratio of thickness of upper and lower portions lies in the range of 0.5A-1.5A, where A is twice the square root of ratio of bulk modulus of substrate and bulk modulus of resistor element.