LEAD FRAME FOR OPTICAL SEMICONDUCTOR DEVICE, PROCESS FOR MANUFACTURING LEAD FRAME FOR OPTICAL SEMICONDUCTOR DEVICE, AND OPTICAL SEMICONDUCTOR DEVICE

摘要

A lead frame for an optical semiconductor device, having a reflection layer (2) composed of silver or a silver alloy formed on an outermost surface of an electrically-conductive substrate (1), in which a thickness of the reflection layer is from 0.2 to 5.0 µm, and in which an intensity ratio of a (200) plane is 20% or more to the total count number when the silver or the silver alloy of the reflection layer is measured by an X-ray diffraction method; a method of producing the same; and an optical semiconductor device utilizing the same.