| 摘要 |
PURPOSE: A single crystal growth method is provided to help a user to manufacture nonpolar single crystal by growing the single crystal on one of m-side and an a-side. CONSTITUTION: A plurality of seed gads(210,220,230) are provided and are processed so that they have an inclined end. The processed seed gads are attached to the top of a seed gad holder(100). A single crystal is grown on one of m-side and a-side of the seed gads which are attached to the seed gad holder.
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