| 摘要 |
1,138,459. Semi-conductor devices. CKD. PRAHA OBOROVY PODNIK. 4 May, 1966 [6 May, 1965], No. 19680/66. Heading H1K. Semi-conductor diodes and controlled rectifiers have within their housings bimetallic elements arranged to disconnect an electrode of the semi-conductor element from the current supply when a predetermined junction temperature is reached. In the case of the diode of Figs. 1 and 2 (not shown), the bimetallic element is an annulus the inner and outer edges of which are respectively located in grooves in an electrode and in the housing wall. At the predetermined temperature the annulus inverts its direction of flexure and snaps the electrode away from the semi-conductor instead of holding the two together. In the semi-conductor switch of Figs. 3 and 4 (not shown), the control lead runs within a cylindrical main electrode and part of its length is formed by a bimetallic unit one end of which is embedded in the control electrode and the other end of which presses against a contact surface on the terminal part of the lead until the predetermined temperature is reached. In the last embodiment, Figs. 5 and 6 (not shown), a control lead again runs within a cylindrical main electrode and is part constituted by a convex diaphragm which presses against the control electrode until the predetermined temperature is reached when the centre of the diaphragm moves axially to disconnect the supply of control current. |
