| 摘要 |
In order to process a silicon wafer for a solar cell (11), an anti-reflective coating (15) on an active silicon layer (13) can be provided with trenches (22), for example by means of a laser (20a). The possibility of damage to the upper face (14) of the active layer (13) by the laser (20a) can be avoided by introducing a contact and doping material (30) into the trench (22). This material contains nickel for the contact function and phosphorus for the doping function. Heating of the contact and doping material (30), for example by means of a second laser (20b), results in doping of the adjacent area (25) of the active layer (13). This can thus be repaired and, in addition, a very low contact resistance can be produced to the finished contact (30'). |
