| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve operating characteristics of a device by applying bias through body contact and eliminating a hole created in a pillar pattern. CONSTITUTION: A plurality of line patterns(105) is formed on the upper side of a semiconductor substrate(100). A pillar pattern(105a) is formed by etching the upper side of the line pattern. A plurality of gates(140a) is formed between the pillar patterns of a direction crossing with the line pattern. A word line(140b) is formed in the side wall of the pillar pattern. A body contact(160) is formed on upper side of the line pattern between the pillar patterns. A bit line is included in the line pattern. The bit line comprises a bit line bonding area.</p> |
