发明名称 |
Method of manufacturing SOI substrate |
摘要 |
The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer therebetween; a third step of splitting the bond substrate at the embrittlement region to form a semiconductor layer over the base substrate with the insulating layer therebetween; and a fourth step of subjecting the bond substrate split at the embrittlement region to a first heat treatment in an argon atmosphere and then a second heat treatment in an atmosphere of a mixture of oxygen and nitrogen to form a reprocessed bond substrate. The reprocessed bond substrate is used again as a bond substrate in the first step. |
申请公布号 |
US8168481(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20100762675 |
申请日期 |
2010.04.19 |
申请人 |
HANAOKA KAZUYA;TSUYA HIDEKI;NAGAI MASAHARU;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HANAOKA KAZUYA;TSUYA HIDEKI;NAGAI MASAHARU |
分类号 |
H01L21/00;H01L21/20;H01L21/30;H01L21/46 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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