发明名称 |
Method of forming a contact hole |
摘要 |
A method of forming a contact hole is provided. A pattern is formed in a photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a first opening. Another pattern is formed in another photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a second opening. The pattern having the first, and second openings is exchanged into the interlayer dielectric layer, and etching stop layer to form the contact hole. The present invention has twice exposure processes and twice etching processes to form the contact hole having small distance. |
申请公布号 |
US8168374(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20100854913 |
申请日期 |
2010.08.12 |
申请人 |
CHOU PEI-YU;LIAO JIUNN-HSIUNG;UNITED MICROELECTRONICS CORP. |
发明人 |
CHOU PEI-YU;LIAO JIUNN-HSIUNG |
分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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