发明名称 Method of creating photolithographic structures with developer-trimmed hard mask
摘要 Novel, developer-soluble, hard mask compositions and methods of using those compositions to form microelectronic structures are provided. The composition comprises the compound a compound for controlling development rate, and a crosslinking agent in a solvent system. The methods involve applying the composition to a substrate and curing the composition. An imaging layer is applied to the composition, followed by light exposure and developing, during which the light-exposed portions of the imaging layer are removed, along with portions of the hard mask composition adjacent said light-exposed portions. The size of the hard mask composition structures are controlled by the development rate, and they yield feature sizes that are a fraction of the imaging layer feature sizes, to give a pattern that can ultimately be transferred to the substrate.
申请公布号 US8168372(B2) 申请公布日期 2012.05.01
申请号 US20070858546 申请日期 2007.09.20
申请人 SUN SAM X.;BREWER SCIENCE INC. 发明人 SUN SAM X.
分类号 G03F7/20;G03F7/09;G03F7/30;G03F7/36;G03F7/40 主分类号 G03F7/20
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