| 摘要 |
An image sensor comprises a substrate including a photodiode, and an insulation pattern structure making contact with the photodiode on the substrate. An anti-reflection pattern is formed on the insulation pattern structure and the substrate. The anti-reflection pattern includes a first opening through which the insulation pattern structure is exposed corresponding to the photodiode. A first insulation interlayer structure is formed on the anti-reflection pattern, and the first insulation interlayer structure includes at least one insulation layer and a second opening connected to the first opening. A metal wiring structure is formed in the insulation layer, and a transparent insulation pattern is formed in the first and second openings. A color filter is formed on the transparent insulation pattern, and a micro lens is formed on the color filter. |
