发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile. |
申请公布号 |
US8168531(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20090434072 |
申请日期 |
2009.05.01 |
申请人 |
KANG TAE-WOOK;JEONG CHANG-YONG;KIM CHANG-SOO;SEO CHANG-SU;PARK MOON-HEE;SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
KANG TAE-WOOK;JEONG CHANG-YONG;KIM CHANG-SOO;SEO CHANG-SU;PARK MOON-HEE |
分类号 |
H01L21/4763;H01L21/00;H01L21/336;H01L21/768;H01L21/77;H01L21/84;H01L29/417 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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