发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
It is made possible to provide a method for manufacturing a semiconductor device that includes CMISs each having a low threshold voltage Vth and a Ni-FUSI/SiON or high-k gate insulating film structure. The method comprises: forming a p-type semiconductor region and an n-type semiconductor region insulated from each other in a substrate; forming a first and second gate insulating films on the p-type and n-type semiconductor regions, respectively; forming a first nickel silicide having a composition of Ni/Si<31/12 above the first gate insulating film, and a second nickel silicide having a composition of Ni/Si≧31/12 on the second gate insulating film; and segregating aluminum at an interface between the first nickel silicide and the first gate insulating film by diffusing aluminum through the first nickel silicide. |
申请公布号 |
US8168499(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20100662581 |
申请日期 |
2010.04.23 |
申请人 |
KOYAMA MASATO;TSUCHIYA YOSHINORI;INUMIYA SEIJI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOYAMA MASATO;TSUCHIYA YOSHINORI;INUMIYA SEIJI |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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