发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device and a method of manufacturing the same are disclosed. The method includes forming ion impurity regions of a first conductivity type by forming a trench in a semiconductor substrate and implanting impurity ions into a lower portion of the trench at different depths; forming an oxide region in the substrate adjacent to one end of the trench; forming a device isolation film filling the trench; forming a high voltage well in the substrate and a second conductivity type body in the high voltage well; forming a gate on the semiconductor substrate partially overlapping the device isolation film; forming second well in the semiconductor substrate at one side of the device isolation film overlapping the ion diffusion regions and the oxide region; and forming source regions in the body and a drain region in the second well. |
申请公布号 |
US8169038(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20090628119 |
申请日期 |
2009.11.30 |
申请人 |
KIM MI YOUNG;DONGBU HITEK CO., LTD. |
发明人 |
KIM MI YOUNG |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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