发明名称 |
Insulated gate type semiconductor device and method for fabricating the same |
摘要 |
In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.
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申请公布号 |
US8168498(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20100962499 |
申请日期 |
2010.12.07 |
申请人 |
INAGAWA HIROSHI;MACHIDA NOBUO;OISHI KENTARO;RENESAS ELECTRONICS CORPORATION;HITACHI TOBU SEMICONDUCTOR, LTD. |
发明人 |
INAGAWA HIROSHI;MACHIDA NOBUO;OISHI KENTARO |
分类号 |
H01L21/336;H01L27/06;H01L21/331;H01L21/8234;H01L27/04;H01L27/088;H01L29/06;H01L29/12;H01L29/417;H01L29/739;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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