发明名称 |
Resistive random access memories and methods of manufacturing the same |
摘要 |
Provided are resistive random access memories (RRAMs) and methods of manufacturing the same. A RRAM includes a storage node including a variable resistance layer, a switching device connected to the storage node, and a protective layer covering an exposed part of the variable resistance layer. The protective layer includes at least one of aluminum oxide and titanium oxide. The variable resistance layer is a metal oxide layer.
|
申请公布号 |
US8169053(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20080289069 |
申请日期 |
2008.10.20 |
申请人 |
KIM KI-HWAN;PARK YOUNG-SOO;LEE MYUNG-JAE;WENXU XIANYU;AHN SEUNG-EON;LEE CHANG-BUM;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KI-HWAN;PARK YOUNG-SOO;LEE MYUNG-JAE;WENXU XIANYU;AHN SEUNG-EON;LEE CHANG-BUM |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|