| 摘要 |
1,173,757. Solid state devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 7 Dec., 1966 [8 Dec., 1965], No. 54712/66. Heading H1K. Voltages are applied across the two non- rectifying junctions of a three-layer thermoelectric device in such a way that " hot " majority charge carriers are injected across the central layer from a junction rendered hot by the Peltier effect to one rendered cold by the same effect. The current in the circuit incorporating the cold junction is thus modulated by the current in the circuit including the hot junction, or vice versa, and an active device having a good high-frequency response results. The thermoelectric materials forming the device may comprise metals, alloys or semi-conductors in various combinations, and either the same or different materials may be used for the two outer layers. In one embodiment an electron gas in a vacuum or an ionized gas is interposed between the central layer and one of the outer layers, the " hot " carriers injected through the central layer from the first outer layer passing through the vacuum gap or ionized gas region before reaching the second outer layer. The various layers may be formed by vapour deposition, for example on to an insulating substrate, cathode sputtering or spraying, or by electrochemical or chemical plating. Alternatively they may be formed as thin sheets which are welded together, such as by pressing or rolling. Various relationships between the voltages applied to the two junctions are proposed for materials of different conductivity type. |
