发明名称 Memory built-in self-characterization
摘要 A memory circuit includes an operational memory and a monitor circuit comprising a circuit element in the operational memory and/or a circuit element substantially identical to a corresponding circuit element in the operational memory. The monitor circuit is operative to measure at least one functional characteristic of the operational memory. A control circuit coupled to the monitor circuit is operative to generate a control signal which varies as a function of the measured characteristic of the operational memory. The memory circuit further includes a programmable voltage source coupled to the operational memory which is operative to generate at least a voltage and/or a current supplied to at least a portion of the operational memory which varies as a function of the control signal.
申请公布号 US8169844(B2) 申请公布日期 2012.05.01
申请号 US20090494718 申请日期 2009.06.30
申请人 AZIMI KOUROS;FRATTI ROGER A.;GEORGE DANNY MARTIN;MCPARTLAND RICHARD J.;AGERE SYSTEMS INC. 发明人 AZIMI KOUROS;FRATTI ROGER A.;GEORGE DANNY MARTIN;MCPARTLAND RICHARD J.
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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