发明名称 |
Method fabricating semiconductor device using multiple polishing processes |
摘要 |
A method of fabricating a phase change memory device includes the use of first, second and third polishing processes. The first polishing process forms a first contact portion using a first sacrificial layer and the second polishing process forms a phase change material pattern using a second sacrificial layer. After removing the first and second sacrificial layers to expose resultant protruding structures of the first contact portion and the phase change material pattern, a third polishing process is used to polish the resultant protruding structures using an insulation layer as a polishing stopper layer. |
申请公布号 |
US8168535(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US201113084657 |
申请日期 |
2011.04.12 |
申请人 |
BAE JUN-SOO;CHOI SUK-HUN;LEE WON-JUN;PARK JOON-SANG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE JUN-SOO;CHOI SUK-HUN;LEE WON-JUN;PARK JOON-SANG |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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