发明名称 |
Method for manufacturing group III nitride compound semiconductor light-emitting device, group III nitride compound semiconductor light-emitting device, and lamp |
摘要 |
A method for manufacturing a Group III nitride semiconductor light-emitting device according to the present invention, comprising forming, on a substrate, a semiconductor layer comprised of a Group III nitride compound semiconductor containing Ga as a Group III element by a sputtering method, wherein during the formation of the semiconductor layer, sputtering is performed under the condition where at least the surface layer of a sputtering target comprised of Ga is liquefied. |
申请公布号 |
US8168460(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20070519987 |
申请日期 |
2007.12.18 |
申请人 |
MIKI HISAYUKI;HANAWA KENZO;SASAKI YASUMASA;SHOWA DENKO K.K. |
发明人 |
MIKI HISAYUKI;HANAWA KENZO;SASAKI YASUMASA |
分类号 |
H01L21/20;H01L33/06;H01L33/12;H01L33/32 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|