发明名称 |
Semiconductor devices including first and second silicon interconnection regions |
摘要 |
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a first interconnection disposed on a substrate. The interconnection includes a first silicon interconnection region and a first metal interconnection region sequentially stacked on the substrate. A second interconnection includes a second silicon interconnection region and a second metal interconnection region that are stacked sequentially. The second silicon interconnection region has a lower resistivity than the first silicon interconnection region. |
申请公布号 |
US8169074(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20100827375 |
申请日期 |
2010.06.30 |
申请人 |
PARK JONG-MAN;YAMADA SANTORU;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JONG-MAN;YAMADA SANTORU |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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