发明名称 Low-voltage image sensor with sensing control unit formed within
摘要 Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.
申请公布号 US8169010(B2) 申请公布日期 2012.05.01
申请号 US20070932922 申请日期 2007.10.31
申请人 KIM MI JIN;MHEEN BONG KI;SONG YOUNG JOO;PARK SEONG SU;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 KIM MI JIN;MHEEN BONG KI;SONG YOUNG JOO;PARK SEONG SU
分类号 H01L31/00;H01L27/146;H04N5/335;H04N5/355;H04N5/369;H04N5/374 主分类号 H01L31/00
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