发明名称 |
Low-voltage image sensor with sensing control unit formed within |
摘要 |
Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device. |
申请公布号 |
US8169010(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20070932922 |
申请日期 |
2007.10.31 |
申请人 |
KIM MI JIN;MHEEN BONG KI;SONG YOUNG JOO;PARK SEONG SU;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM MI JIN;MHEEN BONG KI;SONG YOUNG JOO;PARK SEONG SU |
分类号 |
H01L31/00;H01L27/146;H04N5/335;H04N5/355;H04N5/369;H04N5/374 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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