| 摘要 |
A method of manufacturing a semiconductor device that comprises the steps of: removing a second insulating film on a contact region of a first conductor; forming a second conductive film on the second insulating film; removing the second conductive film on the contact region of the first conductor to make the second conductive film into a second conductor; forming an interlayer insulating film (a third insulating film) covering the second conductor; forming a first hole in the interlayer insulating film on the contact region; and forming a conductive plug, which is electrically connected with the contact region, in the first hole. |
