发明名称 Resistance variable memory device and method of fabricating the same
摘要 A method of fabricating a resistance variable device includes forming selection devices on a substrate, forming a conductive layer on the selection devices, patterning the conductive layer in a first direction to form conductive patterns spaced apart from each other in the first direction and connecting a pair of adjacent selection devices to each other in the first direction, forming a resistance-variable-material-layer on the conductive patterns, and patterning the resistance-variable-material-layer and the conductive patterns in a second direction to form rows of resistance-variable material extending in the second direction and to form electrodes spaced apart from one another, such that each electrode corresponds to a separate selection device.
申请公布号 US8168479(B2) 申请公布日期 2012.05.01
申请号 US20100717219 申请日期 2010.03.04
申请人 HA DAEWON;SAMSUNG ELECTRONICS CO., LTD 发明人 HA DAEWON
分类号 H01L21/82 主分类号 H01L21/82
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