发明名称 |
Semiconductor device and method of fabricating the semiconductor device |
摘要 |
A semiconductor device and a method of fabricating a semiconductor device provide high quality cylindrical capacitors. The semiconductor device includes a substrate defining a cell region and a peripheral circuit region, a plurality of capacitors in the cell region, and supports for supporting lower electrodes of the capacitors. The lower electrodes are disposed in a plurality of rows each extending in a first direction. A dielectric layer is disposed on the lower electrodes, and an upper electrode is disposed on the dielectric layer. The supports are in the form of stripes extending longitudinally in the first direction and spaced from each other along a second direction. Each of the supports engages the lower electrodes of a respective plurality of adjacent rows of the lower electrodes. Each one of the supports is also disposed at a different level in the device from the support that is adjacent thereto in the second direction. |
申请公布号 |
US8169012(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20080247315 |
申请日期 |
2008.10.08 |
申请人 |
BAE YONG-KUG;LEE SI-HYEUNG;AHN TAE-HYUK;OH SEOK-HWAN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE YONG-KUG;LEE SI-HYEUNG;AHN TAE-HYUK;OH SEOK-HWAN |
分类号 |
H01L27/108;H01L29/94 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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