发明名称 |
Semiconductor light emitting device |
摘要 |
An excellent light emitting element capable of improving problems caused by a material having high light-reflectivity and susceptible to electromigration, especially Al used for the electrode. FIG. 2A depicts semiconductor light emitting element having a first and second electrodes 20 and 30 disposed at a same surface side respectively on a first and second conductive type semiconductor layer 11 and 13. In the electrode disposing surface, the first electrode 20 comprises a first base part 23 and a first extended part 24 extending from the first base part, and a plurality of separated external connecting parts 31 of the second electrode 30 arranged side by side in extending direction of the first extended part. |
申请公布号 |
US8168996(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20070785201 |
申请日期 |
2007.04.16 |
申请人 |
INOUE YOSHIKI;SANO MASAHIKO;NICHIA CORPORATION |
发明人 |
INOUE YOSHIKI;SANO MASAHIKO |
分类号 |
H01L33/00;H01L33/32;H01L33/38;H01L33/40;H01L33/60;H01L33/62 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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