发明名称 Semiconductor light emitting device
摘要 An excellent light emitting element capable of improving problems caused by a material having high light-reflectivity and susceptible to electromigration, especially Al used for the electrode. FIG. 2A depicts semiconductor light emitting element having a first and second electrodes 20 and 30 disposed at a same surface side respectively on a first and second conductive type semiconductor layer 11 and 13. In the electrode disposing surface, the first electrode 20 comprises a first base part 23 and a first extended part 24 extending from the first base part, and a plurality of separated external connecting parts 31 of the second electrode 30 arranged side by side in extending direction of the first extended part.
申请公布号 US8168996(B2) 申请公布日期 2012.05.01
申请号 US20070785201 申请日期 2007.04.16
申请人 INOUE YOSHIKI;SANO MASAHIKO;NICHIA CORPORATION 发明人 INOUE YOSHIKI;SANO MASAHIKO
分类号 H01L33/00;H01L33/32;H01L33/38;H01L33/40;H01L33/60;H01L33/62 主分类号 H01L33/00
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