发明名称 |
Realization of self-positioned contacts by epitaxy |
摘要 |
Metal contacts are self-positioned on a wafer of semiconductor product. Respective placement areas for a metal contact are determined by a selective deposition of a growth material over a region of the substrate surface (for example, through epitaxial growth). The growth material is surrounded by an insulating material. The grown material is then removed to form a void in the insulating material which coincides with the desired location of the metal contact. This removal of the grown material exposes the region on the substrate surface. Conductive material is then deposited to fill the void and thus form the metal contact directly with the region of the substrate surface. |
申请公布号 |
US8168536(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20080101744 |
申请日期 |
2008.04.11 |
申请人 |
DUTARTRE DIDIER;CORONEL PHILIPPE;LOUBET NICOLAS;STMICROELETRONICS S.A. |
发明人 |
DUTARTRE DIDIER;CORONEL PHILIPPE;LOUBET NICOLAS |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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